View BB837_1162131.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

BB837 /BB857...
Silicon Tuning Diode For SAT -indoor-units High capacitance ratio Low series resistance Excellent uniformity and matching due to "in-line" matching assembly procedure

1
BB837 BB857
2
Type BB837 BB857
Package SOD323 SCD80
Configuration single single
LS (nH) Marking 1.8 M 0.6 OO
Maximum Ratings at TA = 25C, unless otherwise specified Parameter Diode reverse voltage Peak reverse voltage Forward current Operating temperature range Storage temperature R 5k IF Top Tstg 20 -55 ... 150 -55 ... 150 mA C Symbol VR VRM Value 30 35 Unit V
1
Nov-07-2002
BB837 /BB857...
Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 30 V VR = 30 V, TA = 85 C AC Characteristics Diode capacitance
VR = 1 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz CT
Unit max. nA
typ.
IR 10 200
pF 6 0.5 0.45 6.6 0.55 0.52 12 12.7 1.5 7.2 0.65 5 %
Capacitance ratio
VR = 1 V, VR = 25 V, f = 1 MHz
CT1 /CT25 CT1 /CT28 CT/CT
10.2 9.7 -
-
Capacitance ratio
VR = 1 V, VR = 28 V, f = 1 MHz VR = 1V ... 28V, f = 1 MHz
VR = 5 V, f = 470 MHz
1For
details please refer to Application Note 047
2
Nov-07-2002
Series resistance
Capacitance matching1)
rS
BB837 /BB857...
Diode capacitance CT =
f = 1MHz
10
pF
(VR )
Normalized diode capacitance
C(TA) /C(25C)= (TA ); f = 1MHz
1.035 1V
8
1.025
CTA/C 25
1.02 1.015
7
CT
6 5 4 3 2 1 00 10
1
1.01 1.005 1 0.995 0.99 0.985 0.98
10
V
10
2
0.975 -30
-10
VR
VR = 28V
10
3
TA = Parameter
10 3
pA
pA
10 2 10
2
IR
IR
10 1
10
1
10 0
10
0
-30
-10
10
30
50
70
C
100
10 -1 0 10
TA
3
Reverse current I R =
(TA)
Reverse current IR =
2V 25V 28V
10
30
50
70
C
100
TA
(VR)
80C 60C
28C
10
1
V
10
2
VR
Nov-07-2002

▲Up To Search▲

Price & Availability of BB837

	To Download BB837 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .